ASMARA U.S.A. Inc.

There are 2 controls that apply to that country for those goods:

National Security (NS) Column 2
Missile Technology (MT) Column 1

3A001

Electronic components, as follows (see List of Items Controlled).

Reason for Control

Reason for Control: NS, MT, AT Control(s) Country Chart NS applies to entire entry NS Column 2 MT applies to 3A001.a.1.a MT Column 1 AT applies to entire entry AT Column 1

License Exceptions

LVS: N/A for MT Yes for: $1500: 3A001.c $3000: 3A001.b.1, b.2, b.3, .d, .e and .f $5000: 3A001.a, and .b.4 to b.7 GBS: Yes for 3A001.a.1.b, a.2 to a.12, b.2, and b.8. CIV: Yes for 3A001.a.3.a (for processors with a CTP less than or equal to 12,000 MTOPS), a.3.b, a.3.c, a.4, a.7, and a.11.

Items Controlled

Unit: Number Related Controls: See also 3A101, 3A201, and 3A991 Related Definitions: For the purposes of integrated circuits in 3A001.a.1, 5 x 103 Gy(Si) = 5 x 105 Rads (Si); 5 x 106 Gy (Si)/s = 5 x 108 Rads (Si)/s. Items: a. General purpose integrated circuits, as follows: Note 1: The control status of wafers (finished or unfinished), in which the function has been determined, is to be evaluated against the parameters of 3A001.a. Note 2: Integrated circuits include the following types: "Monolithic integrated circuits"; "Hybrid integrated circuits"; "Multichip integrated circuits"; "Film type integrated circuits", including silicon-on-sapphire integrated circuits; "Optical integrated circuits". a.1. Integrated circuits, designed or rated as radiation hardened to withstand any of the following: a.1.a. A total dose of 5 x 103 Gy (Si), or higher; or a.1.b. A dose rate upset of 5 x 106 Gy (Si)/s, or higher; a.2. "Microprocessor microcircuits", "microcomputer microcircuits", microcontroller microcircuits, storage integrated circuits manufactured from a compound semiconductor, analog-to-digital converters, digital-to-analog converters, electro-optical or "optical integrated circuits" designed for "signal processing", field programmable logic devices, neural network integrated circuits, custom integrated circuits for which either the function is unknown or the control status of the equipment in which the integrated circuit will be used in unknown, Fast Fourier Transform (FFT) processors, electrical erasable programmable read-only memories (EEPROMs), flash memories or static random-access memories (SRAMs), having any of the following: a.2.a. Rated for operation at an ambient temperature above 398 K (125oC); a.2.b. Rated for operation at an ambient temperature below 218 K (-55oC); or a.2.c. Rated for operation over the entire ambient temperature range from 218 K (-55oC) to 398 K (125o C); Note: 3A001.a.2 does not apply to integrated circuits for civil automobile or railway train applications. a.3. "Microprocessor microcircuits", "micro-computer microcircuits" and microcontroller microcircuits, having any of the following characteristics: Note: 3A001.a.3 includes digital signal processors, digital array processors and digital coprocessors. a.3.a. A "composite theoretical performance" ("CTP") of 6,500 million theoretical operations per second (MTOPS) or more and an arithmetic logic unit with an access width of 32 bit or more; a.3.b. Manufactured from a compound semiconductor and operating at a clock frequency exceeding 40 MHz; or a.3.c. More than one data or instruction bus or serial communication port that provides a direct external interconnection between parallel "microprocessor microcircuits" with a transfer rate exceeding 150 Mbyte/s; a.4. Storage integrated circuits manufactured from a compound semiconductor; a.5. Analog-to-digital and digital-to-analog converter integrated circuits, as follows: a.5.a. Analog-to-digital converters having any of the following: a.5.a.1. A resolution of 8 bit or more, but less than 12 bit, with a total conversion time of less than 5 ns; a.5.a.2. A resolution of 12 bit with a total conversion time of less than 200 ns; or a.5.a.3. A resolution of more than 12 bit with a total conversion time of less than 2 ‘s; a.5.b. Digital-to-analog converters with a resolution of 12 bit or more, and a "settling time" of less than 10 ns; Technical Note: 1. A resolution of n bit corresponds to a quantization of 2n levels. 2. Total conversion time is the inverse of the sample rate. a.6. Electro-optical and "optical integrated circuits" designed for "signal processing" having all of the following: a.6.a. One or more than one internal "laser" diode; a.6.b. One or more than one internal light detecting element; and a.6.c. Optical waveguides; a.7. Field programmable logic devices having any of the following: a.7.a. An equivalent usable gate count of more than 30,000 (2 input gates); a.7.b. A typical "basic gate propagation delay time" of less than 0.4 ns; or a.7.c. A toggle frequency exceeding 133 MHz; Note: 3A001.a.7 includes: Simple Programmable Logic Devices (SPLDs), Complex Programmable Logic Devices (CPLDs), Field Programmable Gate Arrays (FPGAs), Field Programmable Logic Arrays (FPLAs), and Field Programmable Interconnects (FPICs). N.B.: Field programmable logic devices are also known as field programmable gate or field programmable logic arrays. a.8. Reserved. a.9. Neural network integrated circuits; a.10. Custom integrated circuits for which the function is unknown, or the control status of the equipment in which the integrated circuits will be used is unknown to the manufacturer, having any of the following: a.10.a. More than 1,000 terminals; a.10.b. A typical "basic gate propagation delay time" of less than 0.1 ns; or a.10.c. An operating frequency exceeding 3 GHz; a.11. Digital integrated circuits, other than those described in 3A001.a.3 to 3A001.a.10 and 3A001.a.12, based upon any compound semiconductor and having any of the following: a.11.a. An equivalent gate count of more than 3,000 (2 input gates); or a.11.b. A toggle frequency exceeding 1.2 GHz; a.12. Fast Fourier Transform (FFT) processors having a rated execution time for an N-point complex FFT of less than (N log2 N)/20,480 ms, where N is the number of points; Technical Note: When N is equal to 1,024 points, the formula in 3A001.a.12 gives an execution time of 500 ‘s. b. Microwave or millimeter wave components, as follows: b.1. Electronic vacuum tubes and cathodes, as follows: Note: 3A001.b.1 does not control tubes designed or rated for operation in any frequency band which meets all of the following characteristics: a.) Does not exceed 31 GHz; and b.) Is "allocated by the ITU" for radio- communications services, but not for radio-determination. b.1.a. Traveling wave tubes, pulsed or continuous wave, as follows: b.1.a.1. Operating at frequencies exceeding 31 GHz; b.1.a.2. Having a cathode heater element with a turn on time to rated RF power of less than 3 seconds; b.1.a.3. Coupled cavity tubes, or derivatives thereof, with a "fractional bandwidth" of more than 7% or a peak power exceeding 2.5 kW; b.1.a.4. Helix tubes, or derivatives thereof, with any of the following characteristics: b.1.a.4.a. An "instantaneous bandwidth" of more than one octave, and average power (expressed in kW) times frequency (expressed in GHz) of more than 0.5; b.1.a.4.b. An "instantaneous bandwidth" of one octave or less, and average power (expressed in kW) times frequency (expressed in GHz) of more than 1; or b.1.a.4.c. Being "space qualified"; b.1.b. Crossed-field amplifier tubes with a gain of more than 17 dB; b.1.c. Impregnated cathodes designed for electronic tubes producing a continuous emission current density at rated operating conditions exceeding 5 A/cm2; b.2. Microwave integrated circuits or modules having all of the following: b.2.a. Containing "monolithic integrated circuits" having one or more active circuit elements; and b.2.b. Operating at frequencies above 3 GHz; Note 1: 3A001.b.2 does not control circuits or modules for equipment designed or rated to operate in any frequency band which meets all of the following characteristics: a.) Does not exceed 31 GHz; and b.) Is "allocated by the ITU" for radio- communications services, but not for radio- determination. Note 2: 3A001.b.2 does not control broadcast satellite equipment designed or rated to operate in the frequency range of 40.5 to 42.5 GHz. b.3. Microwave transistors rated for operation at frequencies exceeding 31 GHz; b.4. Microwave solid state amplifiers, having any of the following: b.4.a. Operating frequencies exceeding 10.5 GHz and an "instantaneous bandwidth" of more than half an octave; or b.4.b. Operating frequencies exceeding 31 GHz; b.5. Electronically or magnetically tunable band-pass or band-stop filters having more than 5 tunable resonators capable of tuning across a 1.5:1 frequency band (fmax/fmin) in less than 10 ‘s having any of the following: b.5.a. A band-pass bandwidth of more than 0.5% of center frequency; or b.5.b. A band-stop bandwidth of less than 0.5% of center frequency; b.6. Microwave "assemblies" capable of operating at frequencies exceeding 31 GHz; b.7. Mixers and converters designed to extend the frequency range of equipment described in 3A002.c, 3A002.e or 3A002.f beyond the limits stated therein; b.8. Microwave power amplifiers containing tubes controlled by 3A001.b and having all of the following: b.8.a. Operating frequencies above 3 GHz; b.8.b. An average output power density exceeding 80 W/kg; and b.8.c. A volume of less than 400 cm3; Note: 3A001.b.8 does not control equipment designed or rated for operation in any frequency band which is "allocated by the ITU" for radio- communications services, but not for radio- determination. c. Acoustic wave devices, as follows, and specially designed components therefor: c.1. Surface acoustic wave and surface skimming (shallow bulk) acoustic wave devices (i.e., "signal processing" devices employing elastic waves in materials), having any of the following: c.1.a. A carrier frequency exceeding 2.5 GHz; c.1.b. A carrier frequency exceeding 1 GHz, but not exceeding 2.5 GHz, and having any of the following: c.1.b.1. A frequency side-lobe rejection exceeding 55 dB; c.1.b.2. A product of the maximum delay time and the bandwidth (time in ‘s and bandwidth in MHz) of more than 100; c.1.b.3. A bandwidth greater than 250 MHz; or c.1.b.4. A dispersive delay of more than 10 ‘s; or c.1.c. A carrier frequency of 1 GHz or less, having any of the following: c.1.c.1. A product of the maximum delay time and the bandwidth (time in ‘s and bandwidth in MHz) of more than 100; c.1.c.2. A dispersive delay of more than 10 ‘s; or c.1.c.3. A frequency side-lobe rejection exceeding 55 dB and a bandwidth greater than 50 MHz; c.2. Bulk (volume) acoustic wave devices (i.e., "signal processing" devices employing elastic waves) that permit the direct processing of signals at frequencies exceeding 1 GHz; c.3. Acoustic-optic "signal processing" devices employing interaction between acoustic waves (bulk wave or surface wave) and light waves that permit the direct processing of signals or images, including spectral analysis, correlation or convolution; d. Electronic devices and circuits containing components, manufactured from "superconductive" materials specially designed for operation at temperatures below the "critical temperature" of at least one of the "superconductive" constituents, with any of the following: d.1. Current switching for digital circuits using "superconductive" gates with a product of delay time per gate (in seconds) and power dissipation per gate (in watts) of less than 10-14 J; or d.2. Frequency selection at all frequencies using resonant circuits with Q-values exceeding 10,000; e. High energy devices, as follows: e.1. Batteries and photovoltaic arrays, as follows: Note: 3A001.e.1 does not control batteries with volumes equal to or less than 27 cm3 (e.g., standard C-cells or R14 batteries). e.1.a. Primary cells and batteries having an energy density exceeding 480 Wh/kg and rated for operation in the temperature range from below 243 K (-30oC) to above 343 K (70oC); e.1.b. Rechargeable cells and batteries having an energy density exceeding 150 Wh/kg after 75 charge/discharge cycles at a discharge current equal to C/5 hours (C being the nominal capacity in ampere hours) when operating in the temperature range from below 253 K (-20oC) to above 333 K (60oC); Technical Note: Energy density is obtained by multiplying the average power in watts (average voltage in volts times average current in amperes) by the duration of the discharge in hours to 75% of the open circuit voltage divided by the total mass of the cell (or battery) in kg. e.1.c. "Space qualified" and radiation hardened photovoltaic arrays with a specific power exceeding 160 W/m2 at an operating temperature of 301 K (28oC) under a tungsten illumination of 1 kW/m2 at 2,800 K (2,527oC); e.2. High energy storage capacitors, as follows: e.2.a. Capacitors with a repetition rate of less than 10 Hz (single shot capacitors) having all of the following: e.2.a.1. A voltage rating equal to or more than 5 kV; e.2.a.2. An energy density equal to or more than 250 J/kg; and e.2.a.3. A total energy equal to or more than 25 kJ; e.2.b. Capacitors with a repetition rate of 10 Hz or more (repetition rated capacitors) having all of the following: e.2.b.1. A voltage rating equal to or more than 5 kV; e.2.b.2. An energy density equal to or more than 50 J/kg; e.2.b.3. A total energy equal to or more than 100 J; and e.2.b.4. A charge/discharge cycle life equal to or more than 10,000; e.3. "Superconductive" electromagnets and solenoids specially designed to be fully charged or discharged in less than one second, having all of the following: Note: 3A001.e.3 does not control "superconductive" electromagnets or solenoids specially designed for Magnetic Resonance Imaging (MRI) medical equipment. e.3.a. Energy delivered during the discharge exceeding 10 kJ in the first second; e.3.b. Inner diameter of the current carrying windings of more than 250 mm; and e.3.c. Rated for a magnetic induction of more than 8 T or "overall current density" in the winding of more than 300 A/mm2; f. Rotary input type shaft absolute position encoders having any of the following: f.1. A resolution of better than 1 part in 265,000 (18 bit resolution) of full scale; or f.2. An accuracy better than ¤ 2.5 seconds of arc.